Model static properties of electronic quantum devices QDTRAM (Quantum Devices Transport Modeling) was designed for simulation of quantum electronic devices.

For: microelectronics and nanoelectronics industries, R&D departments of large corporations in university laboratories dealing with nanoelectronics.

QDTRAM simulates and calculates the electrical characteristics of solid-state electronic devices with active regions of nanometer sizes. These devices are often called quantum or mesoscopic ones.

Who already uses QDTRAM

The system is already in use in some leading Russian electronics factories and research centers. QDTRAM allows designing of new nanoelectronic devices such as resonance-tunneling diodes by providing information on their current-voltage, voltage-capacity characteristics, the spatial potential distribution, current and charge densities, etc.

QDTRAM uses a one-dimensional numerical solution of self-consistent model based on Schrodinger and transport equations.

Unique features

  • Local formalism.
  • Ability to describe quantum and classic transport in the framework of unit formalism, which allows one to take into account complex effects of interaction between quantum and classic regions in real devices.

Page from site http://eng.interface.ru
Source web address http://eng.interface.ru/home.asp?artId=402